METHOD FOR PRODUCING A SINGLE CRYSTRAL OF SEMICONDUCTOR MATERIAL

摘要

PURPOSE: A method for producing a single crystal of a semiconductor material is provided prevent the flow of a melt by a discharge tube by controlling the side direction of an interface more effectively. CONSTITUTION: A dish comprises a discharging tube(11) consisting of a semiconductor. A semiconductor granule is fused on a dish with the first induction heating coil. The fused granule melt is formed as a form of the melt neck(18) and a melt waist(16). The heat is transferred to the granule melt with the second induction heating coil(15). The second induction heating coil comprises an opening in which the melt neck passes through. The cooling gas is transferred to the discharging tube and the melt neck to control the lateral position of an interface between the discharging tube and the melt neck.