| 摘要 |
A method for manufacturing a photomask includes forming a mask pattern to be transferred onto a wafer on a transparent substrate; transferring the mask pattern on a wafer to form a wafer pattern; selecting a critical dimension modification region requiring a line width modification in the pattern transferred onto the wafer; forming a resist pattern for selectively exposing a portion of the substrate corresponding to the critical dimension modification region; varying a light transmittance of the exposed portion of the substrate by implanting ions into the exposed portion using the resist pattern as an ion implantation mask; and selectively removing the resist pattern.
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