| 摘要 |
A memory structure includes: a substrate; a control gate positioned on the substrate; floating gates positioned at two sides of the control gate, wherein the floating gates have a U-shaped bottom embedded in the substrate; a first dielectric layer positioned between the control gate and the substrate; a second dielectric layer positioned between the U-shaped bottom of the floating gates and the substrate; a third dielectric layer positioned between the control gate and the floating gates; a local doping region positioned around the floating gates channel; and a source/drain doping region positioned in the substrate at a side of the floating gates.
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