发明名称 |
Image sensor pixel having a lateral doping profile formed with indium doping |
摘要 |
An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.
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申请公布号 |
US7666703(B2) |
申请公布日期 |
2010.02.23 |
申请号 |
US20050036647 |
申请日期 |
2005.01.14 |
申请人 |
OMNIVISION TECHNOLOGIES, INC. |
发明人 |
RHODES HOWARD E.;NOZAKI HIDETOSHI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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