发明名称 Pattern creation method, mask manufacturing method and semiconductor device manufacturing method
摘要 A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer.
申请公布号 US7669172(B2) 申请公布日期 2010.02.23
申请号 US20080050764 申请日期 2008.03.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO TAKESHI;TANAKA SATOSHI;KOTANI TOSHIYA;FUJISAWA TADAHITO;HASHIMOTO KOJI
分类号 G06F17/50;G03F1/68 主分类号 G06F17/50
代理机构 代理人
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