| 摘要 |
PURPOSE: A method for fabricating a gate dielectric layer in a semiconductor device with a recessed channel is provided to improve the refresh property of a device by increasing the breakdown voltage and reducing the leakage current. CONSTITUTION: A recess trench is formed within a semiconductor substrate. A first gate insulating layer is formed on the exposed surface of the recess trench through a dry oxidation process. The sidewall of the recess trench is thicker than the bottom of the first gate insulating layer. A gate insulating layer is formed by forming a second gate insulating layer through plasma oxidation process on the first gate insulating layer. The sidewall of a recess trench corresponds to the thickness of the bottom of the gate insulating layer. A gate stack(170) overlapping with the recess trench is formed on the gate insulating layer.
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