发明名称 Local ESD protection for low-capicitance applications
摘要 A semiconductor device for locally protecting an integrated circuit input/output (I/O) pad (301) against ESD events, when the I/O pad is located between a power pad (303) and a ground potential pad (305a). A first diode (311) and a second diode (312) are connected in series, the anode (311b) of the series connected to the I/O pad and the cathode (312a) connected to the power pad. A third diode (304) has its anode (304b) tied to the ground pad and its cathode (304a) tied to the I/O pad. A string (320) of at least one diode has its anode (321b) connected to the series between the first and second diode (node 313), isolated from the I/O pad, and its cathode (323a) connected to the ground pad. The string (320) may comprise three or more diodes.
申请公布号 US7667243(B2) 申请公布日期 2010.02.23
申请号 US20070739801 申请日期 2007.04.25
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DUVVURY CHARVAKA;BOSELLI GIANLUCA
分类号 H01L23/62 主分类号 H01L23/62
代理机构 代理人
主权项
地址