| 摘要 |
<p>PURPOSE: A method for fabricating a semiconductor die is provided to unite a first test trench of inside space and a second test trench of peripheral region by correcting the peripheral region and inside region. CONSTITUTION: A test wafer is prepared. A test trench is formed from the upper side test wafer into the inside. A cross section of the test trench is measured. The exposure dose is corrected by comparing the cross sections of the test trench of the test wafer. A wafer(210) is prepared. A photoresist is spread on the upper side of wafer. A photoresist is exposed to the exposure dose.</p> |
