| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase the number of the feet formed on the surface of a copper layer by performing a zinc ion implantation process. CONSTITUTION: An insulating layer(110) is formed on a semiconductor substrate(100) having a predetermined substructure. The wiring formation region is formed by etching the insulating layer. The diffusion barrier is formed on the insulating layer including the wiring formation region. The metal layer burying the wiring formation region is formed on the diffusion barrier. The metal layer and diffusion barrier are removed in order to expose the insulating layer. The metal wiring(120) is formed in the wiring formation region.
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