METHOD OF GATE DIELECTRIC FORMATION USING LOW TEMPERATURE CURING AND METHOD FOR MANUFACTURING ORGANIC THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method of gate dielectric formation using a low temperature curing and a method for manufacturing an organic thin film transistor using the same are provided to improve the efficiency of an organic thin film transistor using a flexible substrate. CONSTITUTION: A gate electrode(30) is formed at an upper part of a substrate(10). A gate insulating layer(20) is coated on the lower part of a substrate including the gate electrode through a sol-gel method. The substrate with coated gate insulating layer is inserted into the solution including an OH radical and a curing is performed. The solution is heated to 20-150°C by using a heating element. The ultraviolet ray is radiated on the solution and curing is performed. A sol-gel method is one of a spin coating, a spray coating, a dip-coating, a wiping, and a roll coating.