| 摘要 |
<p>PURPOSE: A method for forming fine pattern of a semiconductor device is provided to control reflow speed and reflow amount of a photoresist, to enable stable and uniform pattern formation, and to obtain fine width. CONSTITUTION: A method for forming fine pattern of a semiconductor device comprises the steps of: applying at least three kinds of a photoresist composition containing photosensitive polymers with different glass transition temperatures on the upper side of a layer(200) in a high glass transition temperature order; forming a photoresist pattern on multilayered photoresist layer through a lithography process; and performing a reflow process for the photoresist pattern.</p> |
