| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the attack of an oxide film and an oxide-nitride-oxide film by protecting using a photoresist for the oxide-nitride-oxide film and the oxide film when eliminating a hard mask pattern. CONSTITUTION: A semiconductor substrate is laminated with an oxide film(62A), a floating gate poly film, an oxide-nitride-oxide film, and a control gate poly film successively. A hard mask pattern is formed on the top of the control gate poly film. A gate pattern is formed by etching an oxide film, a floating gate poly film, an oxide-nitride-oxide film(66A), and a control gate poly film. The hard mask exposes. A Photoresist is formed in order to cover the oxide-nitride-oxide film and oxide film. A hard mask pattern(70B) is removed. A photoresist(80A) is removed.</p> |
