| 摘要 |
<p>PURPOSE: An EUV(extreme ultraviolet radiation) photo mask and a manufacturing method of the same are provided to prevent a shading effect by forming a highly reflective pattern on a sidewall of a absorber pattern. CONSTITUTION: A reflecting layer(110) is formed in upper part a mask substrate. The absorber pattern(130) is formed on upper part of the reflection layer. The highly reflective pattern is formed on the reflecting layer and a absorber patten side wall. The highly reflective pattern(145) is formed with the material same as the reflection layer pattern. The reflecting layer comprises a laminating structure of multilayer.</p> |
