| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to reduce light interference phenomenon through the reduction of crosstalk by forming identically focal length of microlens. CONSTITUTION: An interlayer dielectric layer(130) is formed on a substrate(110) of a pixel region. A metal wiring(140) is formed between interlayer dielectric layers. A protective film(150) for protecting device from moisture and scratch is formed on the interlayer dielectric layer. A color filter layer(160) is formed by using a flame resist on the interlayer dielectric layer. A planarization layer(170) is formed on the color filter layer. A plurality of first micro lenses(181) is formed on the interlayer dielectric layer. A plurality of second micro lenses is formed between first micro lenses.
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