PROCEDE DE MODERATION DE DEFORMATION

摘要

The method involves forming an embrittlement plane (4) on a substrate (6) i.e. homogeneous plate, by an ionic and/or atomic implantation through a face (2) of the substrate. An embrittlement plane (4') is formed in the substrate by another ionic and atomic implantation through a face (2') of the substrate to reduce curvature of the substrate. A substrate (7) i.e. stiffener plate, is deposited on the substrate (6). A thin layer (5) is separated from the substrate (6) at the level of the plane (4) without separation at the level of the plane (4'). The homogeneous plate is made of garnet or sapphire, and comprises bismuth doped magnetic garnet deposits.