SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a diode having an extremely low rise voltage and a high withstand reverse voltage of a degree causing no practical problem, and to provide a manufacturing method thereof.

SOLUTION: The semiconductor device includes an N-type semiconductor layer 1 containing indium with a surface on which an indium oxide layer 2 with a thickness allowing generation of a two-dimensional electron gas and tunneling of electrons of the two-dimensional gas is formed. A first electrode 3 of a metal or conductive oxide film is formed on the indium oxide layer 2 and a second electrode 4 is formed to be electrically connected with the N-type semiconductor layer (N-type semiconductor substrate) 1.

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