| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technology capable of reducing the fraction defective of MOS capacitance even if screening is not executed. Ž<P>SOLUTION: A series capacitance element is formed by serially connecting a MOS capacitor MOS1 and a MOS capacitor MOS2 to each other between high potential and low potential. A polysilicon capacitor PIP1 and a polysilicon capacitor PIP2 are connected in parallel with the series capacitance element. Specifically, a high-concentration semiconductor region HS1 constituting a lower electrode of the MOS capacitor MOS1 is connected to a high-concentration semiconductor region HS2 constituting a lower electrode of the MOS capacitor MOS2. In addition, an electrode E1 constituting an upper electrode of the MOS capacitor MOS1 is connected to the low potential (for instance, GND), and an electrode E3 constituting an upper electrode of the MOS capacitor MOS2 is connected to the high potential (for instance, power potential). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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