| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film field effect transistor manufacturing method using an oxide semiconductor high in ON/OFF ratio and excellent in operational stability. <P>SOLUTION: The thin film field effect transistor manufacturing method includes steps of forming a gate electrode 2, forming a gate insulating film 3, forming an active layer of the oxide semiconductor, and forming a resistance layer 6 of an oxide semiconductor lower in electric conductivity than that of the active layer in contact with the active layer, the resistance decreasing step of decreasing the resistance of a part of the resistance layer to form at least two low resistance regions at predetermined intervals, a region (not resistance decreased region) sandwiched between the two low resistance regions and not decreased in resistance being formed flat inside the gate electrode, and the step of forming a source electrode and a drain electrode in contact with each of the two low resistance regions. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
