| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a film deposition system using surface wave plasma which can deposit a fine crystal silicon thin film of high quality, in which the ratio of crystal orientation properties (220) is high by surface wave plasma. <P>SOLUTION: The film deposition system comprises: a chamber 101; a substrate holding part 106 holding the body 100 to be treated; process gas introduction pipes 110a, 110b introducing a process gas into the chamber 101; material gas introduction pipes 111a, 111b introducing a silicon element-containing material gas into the chamber 101; a microwave waveguide 102 introducing microwaves; a dielectric plate provided so as to be confronted with the substrate holder 106 and generating the surface wave plasma of a process gas at the inside of the chamber 101 by surface waves generated at the face confronted with the substrate holding part 106 by microwaves; and a DC pulse source 109 applying a DC pulse to the substrate holding part 106. A fine crystal silicon thin film is deposited on the body 100 to be treated using the surface wave plasma and the material gas while applying a DC pulse to the substrate holding part 106. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
