| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing which decreases a polishing rate for a low-dielectric-constant insulating film, has both a high polishing rate and high flattening characteristics for an interlayer dielectric (cap layer) such as a barrier metal film and a TEOS film, and suppresses surface defects such as dishing, erosion, a scratch, and a fang; and to provide a chemical polishing method using the same. <P>SOLUTION: The aqueous dispersion for chemical mechanical polishing contains (A) silica particles and (B) an organic acid having two or more carboxyl radicals. The silica particles (A) have such chemical properties that the number of silanol groups calculated based on the signal area of a<SP>29</SP>Si-NMR spectrum is 2.0 to 3.0×10<SP>21</SP>groups/g. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
