发明名称 SEMICONDUCTOR WAFER TSV-PROCESSING FILM, AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER USING THE FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer TSV (through silicon via)-processing film which is an adhesive film for pasting a protective substrate plate on the wafer in the processing comprising the formation of a penetrating hole and forming a penetrated electrode at the semiconductor wafer, has good moisture resistance and heat resistance, is reduced in the amount of a gas formed in the heating time, and has also alkali resistance and acid resistance. <P>SOLUTION: This semiconductor wafer TSV-processing film includes a fluoropolyether rubber adhesive. Also, a semiconductor wafer TSV-processing film being peelably pasted on the one side surface of its supporting film is provided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010037493(A) 申请公布日期 2010.02.18
申请号 JP20080204610 申请日期 2008.08.07
申请人 SHIN-ETSU CHEMICAL CO LTD 发明人 ICHIROKU NOBUHIRO;YAMAGUCHI HIROMASA
分类号 C09J7/00;C09J7/02;C09J11/04;C09J11/06;C09J171/08;C09J183/05;C09J183/08;H01L21/683 主分类号 C09J7/00
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