发明名称 |
SEMICONDUCTOR WAFER TSV-PROCESSING FILM, AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER USING THE FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer TSV (through silicon via)-processing film which is an adhesive film for pasting a protective substrate plate on the wafer in the processing comprising the formation of a penetrating hole and forming a penetrated electrode at the semiconductor wafer, has good moisture resistance and heat resistance, is reduced in the amount of a gas formed in the heating time, and has also alkali resistance and acid resistance. <P>SOLUTION: This semiconductor wafer TSV-processing film includes a fluoropolyether rubber adhesive. Also, a semiconductor wafer TSV-processing film being peelably pasted on the one side surface of its supporting film is provided. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010037493(A) |
申请公布日期 |
2010.02.18 |
申请号 |
JP20080204610 |
申请日期 |
2008.08.07 |
申请人 |
SHIN-ETSU CHEMICAL CO LTD |
发明人 |
ICHIROKU NOBUHIRO;YAMAGUCHI HIROMASA |
分类号 |
C09J7/00;C09J7/02;C09J11/04;C09J11/06;C09J171/08;C09J183/05;C09J183/08;H01L21/683 |
主分类号 |
C09J7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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