发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES |
摘要 |
A semiconductor device manufacturing method includes: depositing a first insulating film and a second insulating film on a substrate sequentially and forming a pattern on the second insulating film; forming a silicon film on the pattern; forming a sidewall made of the silicon film by processing the silicon film until a part of the second insulating film is exposed by use of etch-back; removing the second insulating film; and performing dry etching by use of a fluorocarbon-based gas, to process the first insulating film by using the sidewall as a mask. The processing of the first insulating film includes applying on the substrate a self-bias voltage Vdc that satisfies a relational expression of Vdc<46x−890, where a film thickness of the silicon film that constitutes the sidewall is x nm (19.5≦̸x≦̸22.1).
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申请公布号 |
US2010041235(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
US20090539937 |
申请日期 |
2009.08.12 |
申请人 |
HASHIMOTO JUNICHI;OMURA MITSUHIRO;HYODO YASUYOSHI;TSUCHIYA TAKAMICHI |
发明人 |
HASHIMOTO JUNICHI;OMURA MITSUHIRO;HYODO YASUYOSHI;TSUCHIYA TAKAMICHI |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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