发明名称 Structure, Design Structure and Method of Manufacturing a Structure Having VIAS and High Density Capacitors
摘要 A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate.
申请公布号 US2010041203(A1) 申请公布日期 2010.02.18
申请号 US20080191379 申请日期 2008.08.14
申请人 COLLINS DAVID S;FENG KAI D;HE ZHONG-XIANG;LINDGREN PETER J;RASSEL ROBERT M 发明人 COLLINS DAVID S.;FENG KAI D.;HE ZHONG-XIANG;LINDGREN PETER J.;RASSEL ROBERT M.
分类号 H01L21/20 主分类号 H01L21/20
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