发明名称 |
NOVEL METHOD TO INTEGRATE GATE ETCHING AS ALL-IN-ONE PROCESS FOR HIGH K METAL GATE |
摘要 |
The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes applying a first dry etching process to a semiconductor substrate in an etch chamber through openings of a patterned mask layer defining gate regions, removing a polysilicon layer and a metal gate layer on the semiconductor substrate; applying a H2O steam to the semiconductor substrate in the etch chamber, removing a capping layer on the semiconductor substrate; applying a second dry etching process to the semiconductor substrate in the etch chamber, removing a high k dielectric material layer; and applying a wet etching process to the semiconductor substrate to remove polymeric residue.
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申请公布号 |
US2010041236(A1) |
申请公布日期 |
2010.02.18 |
申请号 |
US20090367399 |
申请日期 |
2009.02.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN JR JUNG;LIN YIH-ANN;CHEN RYAN CHIA-JEN |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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