| 摘要 |
<p>Disclosed is a reactor for treating flat substrates, comprising a vacuum chamber (11) and a process chamber (9). A first electrode (5) and a counter electrode (7) which form two opposite walls of the process chamber are provided for generating a plasma. The counter electrode can accommodate the substrate (3). The reactor further comprises means for introducing (19, 23, 25) and evacuating gaseous material into and/or from process chamber, an inlet and outlet for the vacuum chamber, and a mechanism (41, 43) for varying the relative distance between the electrodes, a first relatively great distance being used when the process chamber is loaded and discharged and a second relatively short distance being used when the treatment is performed, and/or a device which is associated with the counter electrode, is used for accommodating substrates, and is designed such that the substrate is disposed at an angle alpha ranging from 0°to 90°, preferably at an angle of 1°, 3°, 5°, 7°, 9°, 11°, 13°, 15°, 17°, 20°, 25°, 30°, 40°, 45°, relative to the vertical direction at least while the treatment is performed, the substrate surface that is to be treated facing downward.</p> |
