| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce the width of a pin pattern by removing the part of the both side of an active region edge in the direction of channel width. CONSTITUTION: An element isolation film(305) formed on the semiconductor substrate(300) defines an active region(A/R). The active region is formed to be projected. An oxygen ion is inserted in the projected active region. The surface of the active region in which the oxygen ion is inserted is oxidized and an oxide film(320) is formed. The oxide film is removed for removing the both side of the edge of the active region. The gate is formed to cover the projected active region on the semiconductor substrate after removing the oxide film.</p> |
