发明名称 METHOD FOR UTILIZING MULTILAYER/MULTI-INPUT/MULTI-OUTPUT (MLMIMO) MODEL TO METAL GATE STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing metal gate structure on a wafer in real time, by utilizing a multilayer multi-step processing procedure and related multilayer/multi-input/multi-output (MLMIMO) models. SOLUTION: The method relates to wafer processing utilizing multilayer processing procedure including one or more measuring processes, one or more poly-etching (P-E) processes and one or more metal gate etching processes, and the multilayer/multi-input/multi-output (MLMIMO) model and library. The MLMIMO processing control utilizes modeling of behaviors interacting dynamically between multiple layers and/or multiple processing steps. The multiple layers and/or multiple processing steps can relate to manufacturing lines, grooves, vias, spacers, contacts, and gate structures to be manufactured by utilizing isotropic and/or anisotropic etching processes. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010041051(A) 申请公布日期 2010.02.18
申请号 JP20090176455 申请日期 2009.07.29
申请人 TOKYO ELECTRON LTD 发明人 FUNK MERRITT;SUNDARARAJAN RADHA;YAMASHITA ASAO;PRAGER DANIEL J;LEE HYUNG JOO
分类号 H01L21/3065;H01L21/28 主分类号 H01L21/3065
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