| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid state imaging device and its manufacturing method allowing to fine a pixel area and to ensure a sufficient modulation factor. <P>SOLUTION: A first conductivity type charge accumulation region 12 is buried in a semiconductor substrate 11. A first conductivity type charge transfer destination diffusion layer 22 is formed on a surface of the semiconductor substrate 11. A transfer gate electrode 21 is formed on the charge accumulation region 12 to transfer charges from the charge accumulation region 12 to the charge transfer destination diffusion layer 22. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
