METHOD OF EVALUATING SILICON SUBSTRATE, METHOD OF DETECTING CONTAMINATION, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of evaluating a silicon substrate, in which a metal impurity concentration in the substrate is accurately evaluated with high sensitivity by suppressing recombination on a substrate surface more than before. Ž

SOLUTION: The method of evaluating the silicon substrate, in which metal contamination of the silicon substrate is evaluated in a microwave photoconductive decay method minority carrier lifetime method, is characterized by measuring a recombination lifetime in the silicon substrate by injecting carriers at 3×1012to 1×1013Photons/cm2when the silicon substrate is a P-type silicon substrate or at 2×1011to 1×1012Photons/cm2when the silicon substrate is an N-type silicon substrate for microwave photoconductive decay method minority carrier excitation after forming a passivation film by thermal oxidation on the surface of the silicon substrate. Ž

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