| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plated product in which a seed layer is thinly film-formed at a uniform film thickness, capable of forming super fine wiring by improving film formation uniformity and adhesion when a seed layer is formed by electroless copper plating in damascene copper wiring or the like compared with the case where electroless copper plating is performed to the surface of a single substance metal, further, and dissolving the complication of the formation of two layers of a barrier layer and a catalyst metal layer prior to the film formation of a copper seed layer. Ž<P>SOLUTION: The plated product is characterized in that a barrier alloy thin film for copper diffusion prevention composed of a metal B capable of substitution plating with copper ions comprised in an electroless plating liquid and also having barrier properties to copper and a metal A having barrier properties to copper is formed on a base material, the barrier alloy thin film for copper diffusion prevention has a composition in which the ratio of the metal A is controlled to 15-35 atom%, and a copper thin film is formed thereon by electroless substitution plating. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
