| 摘要 |
PROBLEM TO BE SOLVED: To attain a fin type CMISFET which can acquire the desired characteristics. SOLUTION: The radius of curvature r1' at the upper corner in an n-type fin type semiconductor region 13b, located on the outside of a gate insulating film 14b, is larger than the radius of curvature r1 at the upper corner in an n-type fin type semiconductor region 13b located on the underside of the gate insulating film 14b but is equal to or smaller than 2×r1. The radius of curvature r2' at the upper corner in a p-type fin type semiconductor region 913c, located on the outside of a gate insulating film 914c, is larger than the radius of curvature r2 at the upper corner in a p-type fin type semiconductor region 913c, located on the underside of the gate insulating film 914c but is equal to or smaller than 2×r2. COPYRIGHT: (C)2010,JPO&INPIT |
