发明名称 Forming Substrate Structure by Filling Recesses with Deposition Material
摘要 A substrate structure is produced by forming a first material layer on a substrate having a recess, removing the first material layer from the portion of the substrate except for the recess using a second material that reacts with the first material, and forming a deposition film from the first material layer using a third material that reacts with the first material. A method of manufacturing a device may include the method of forming a substrate structure.
申请公布号 US2010041179(A1) 申请公布日期 2010.02.18
申请号 US20090539289 申请日期 2009.08.11
申请人 SYNOS TECHNOLOGY, INC. 发明人 LEE SANG IN
分类号 H01L21/20;H01L21/31;H01L21/3205 主分类号 H01L21/20
代理机构 代理人
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