METHOD FOR ELECTRON BEAM INDUCED ETCHING OF LAYERS CONTAMINATED WITH GALLIUM

摘要

The invention relates to a method for electron beam induced etching of a layer (120, 122) contaminated with gallium. Said method consists of the following steps: at least one first compound containing halogen is provided as an etching gas on one area on which an electron beam strikes the layer (120, 220) and at least one second compound containing halogen is provided as a precursor gas for removing gallium from said area.