METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to manufacture a thin film transistor of a bottom gate structure by forming a buffer layer between a semiconductor layer, a source electrode layer, and a drain electrode layer using an oxide semiconductor layer. CONSTITUTION: A gate electrode layer(111) is formed on a substrate. A gate insulating layer is formed on the gate electrode layer. An oxide semiconductor film is formed on gate insulating layers(102a, 102b). A channel protection layer is formed on a channel forming region of the semiconductor film. A film with a conductive type of n-type on the semiconductor film(113) is formed. A conductive film is formed on a film with the conductive type of n-type. A resist mask is formed on the conductive film. A film and a semiconductor film with the conductive film and the conductive type of n-type are etched using the resist mask.