| 摘要 |
Two semiconductor substrates (21,22) are first bonded together by means of metal bumps (25), while respective one-side surfaces (23,24) on which device patterns are formed are faced to each other, and a resin (26) is then filled into a gap between the respective one-side surfaces (23,24); thereafter, each of the semiconductor substrates (21,22) is polished and thinned to a prescribed thickness (t 1 , t 2 ). Furthermore, via holes (VH) and an insulating film (27) are formed; part of the insulating film (27) in contact with the metal bumps (25) is opened, the via holes (VH) are filled with a conductor (28), and electrode pads (29) are realized on the conductor (28) to thereby form a structure (20a). Finally, a required number of structures ( 20a, 20b, 20c) are electrically connected with each other through the electrode pads (29) and stacked to thereby obtain a semiconductor device (10). |
