发明名称 |
PIEZOELECTRIC THIN-FILM RESONATOR, FILTER USING THE SAME, AND DUPLEXER USING THE SAME |
摘要 |
PURPOSE: A piezoelectric thin-film resonator, a filter and a duplexer thereof are provided to improve Q of FBAR(Film Bulk Acoustic Resonator) by establishing a region burying a air gap or an insulator to the edge of the bottom electrode or the upper electrode. CONSTITUTION: A bottom electrode(2) is formed on a substrate(1). A piezoelectric film(3) is formed on the bottom electrode. The upper electrode(4) is formed on piezoelectric film. A air gap(8) is formed to be ranged from the inner side of the facing area to the outside in order to cover the upper electrode and a boundary between the facing area of the bottom electrode and the outside. The air gap is formed in a part of the film thickness direction of the piezoelectric film. The air gap is formed by eliminating a part of the piezoelectric film. |
申请公布号 |
KR20100019365(A) |
申请公布日期 |
2010.02.18 |
申请号 |
KR20090072309 |
申请日期 |
2009.08.06 |
申请人 |
FUJITSU LIMITED |
发明人 |
NISHIHARA TOKIHIRO;HARA MOTOAKI;TANIGUCHI SHINJI;SAKASHITA TAKESHI;YOKOYAMA TSUYOSHI;IWAKI MASAFUMI;UEDA MASANORI |
分类号 |
H03H9/17;H01L41/09;H01L41/18;H01L41/22;H01L41/33;H03H9/15;H03H9/54;H03H9/64 |
主分类号 |
H03H9/17 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|