| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that forms a resistance part by a low forming voltage, and improves the reliability of a resistance change element and the other elements. <P>SOLUTION: A resistance change element RES has: a plurality of insulating parts INS1 and INS2 arranged in parallel between a first electrode EL1 and a second electrode EL2; and resistance parts R1 and R2 formed in at least one of the insulating parts INS1 and INS2 by forming, and having resistance values changing depending on a voltage applied to the first and second electrodes EL1 and EL2. The resistance parts R1 and R2 are formed in an insulating part with a lower breakdown voltage among the insulating parts INS1 and INS2. Accordingly, the resistance parts R1 and R2 can be formed by a low forming voltage. The forming voltage can be reduced, thereby the reliability of the resistance change element RES and the other elements can be improved. <P>COPYRIGHT: (C)2010,JPO&INPIT |
