| 摘要 |
PROBLEM TO BE SOLVED: To decrease the layout area of a data write section of a magnetic random access memory. SOLUTION: Write bit lines (WBL0, WBL1) are arranged in a direction orthogonal to an easy axis (EX) of magnetization of a variable magnetoresistive element (VR), and write bit line drive circuits (22U, 22L) supply currents to the bit lines in directions corresponding to write data. Meanwhile, bit lines (BL0-BL3) are supplied with currents in fixed directions during data writing. In one of the write bit line drive circuits disposed on both sides of the write bit lines, a write bit line driver (30u) is arranged in common for a plurality of write bit lines; and in the other write bit line drive circuit, write bit line drivers are arranged individually for write bit lines. COPYRIGHT: (C)2010,JPO&INPIT |
