| 摘要 |
A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.
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