| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of manufacturing a semiconductor device which has a higher breakdown voltage and higher performance. Ž<P>SOLUTION: The method for manufacturing a semiconductor device includes: a semiconductor substrate preparing step for preparing a semiconductor substrate 102; an impurity ion implantation step for forming an impurity ion implantation mask M1 on the surface of the semiconductor substrate 102 and implanting n-type impurity ions through an opening portion of the impurity ion implanting mask M1; an annealing step for heating the semiconductor substrate 102, up to a predetermined annealing temperature, to activate the n-type impurity ions; and an embedding diffusion step for heating the semiconductor substrate 102, up to a predetermined embedding diffusion temperature, to execute embedding diffusion of n-type impurity atoms activated in the annealing step, in this order. In the manufacturing method, the semiconductor substrate 102 prepared in the semiconductor substrate preparing step is a semiconductor substrate in which the impurity concentration of the n-type impurity is set lower by the amount of oxygen atoms to be made to be donor in the embedding diffusion step than the set value of the impurity concentration of the n-type impurity. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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