| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure reliability by reducing a shortened hot carrier life in a high-voltage system transistor even when an ONO insulating film and the gate insulating film of a peripheral transistor are formed by using an ISSG oxidizing method in response to miniaturization. Ž<P>SOLUTION: The upper oxidized film of the ONO insulating film and the gate insulating film of the peripheral transistor are formed by using the ISSG oxidizing method. In the formation process, the gate insulating film of the high-voltage system transistor is formed by using the ISSG method in a state where the segregation of the nitrogen 12 is performed on a semiconductor substrate 1 by high-temperature annealing. Thus, an oxynitride layer 13 is formed as the high-voltage system gate insulating film constituting a peripheral circuit. Even when the ONO insulating film and the gate insulating film of the peripheral transistor are formed by using the ISSG oxidizing method in response to miniaturization, its reliability is secured by reducing the shortened hot carrier life in the high-voltage system transistor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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