发明名称 WAFER FOR HEAT TREAT FURNACE EVALUATION, HEAT TREATMENT FURNACE EVALUATION METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To highly sensitively and reliably evaluate troubles, such as, metal contamination on a wafer and epitaxial layer faults due to heat treatment, in recombination lifetime measurements. SOLUTION: The wafer for heat treatment furnace evaluation is a silicon wafer having a resistance ratio within a range of 100-10,000 Ωcm. A heat treat furnace evaluation method uses the wafer for heat treat furnace evaluation. A semiconductor waver manufacturing method is also provided. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010040793(A) 申请公布日期 2010.02.18
申请号 JP20080202514 申请日期 2008.08.06
申请人 SUMCO CORP 发明人 KUBOTA TSUYOSHI;SADAMITSU SHINSUKE;TAKAO HIROYUKI;FUSEGAWA KAZUHIRO
分类号 H01L21/02;H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/02
代理机构 代理人
主权项
地址