发明名称 |
WAFER FOR HEAT TREAT FURNACE EVALUATION, HEAT TREATMENT FURNACE EVALUATION METHOD, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To highly sensitively and reliably evaluate troubles, such as, metal contamination on a wafer and epitaxial layer faults due to heat treatment, in recombination lifetime measurements. SOLUTION: The wafer for heat treatment furnace evaluation is a silicon wafer having a resistance ratio within a range of 100-10,000 Ωcm. A heat treat furnace evaluation method uses the wafer for heat treat furnace evaluation. A semiconductor waver manufacturing method is also provided. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010040793(A) |
申请公布日期 |
2010.02.18 |
申请号 |
JP20080202514 |
申请日期 |
2008.08.06 |
申请人 |
SUMCO CORP |
发明人 |
KUBOTA TSUYOSHI;SADAMITSU SHINSUKE;TAKAO HIROYUKI;FUSEGAWA KAZUHIRO |
分类号 |
H01L21/02;H01L21/205;H01L21/22;H01L21/31 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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