CLEANING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for cleaning semiconductor device is provided to keep a bonding state stably between a layer to be patterned and a sub-layer by performing cleaning process in order to remove a polymer in a short time with an inorganic compound. CONSTITUTION: A patterned semiconductor substrate is prepared using a photoresist film(S10). A first cleaning process with a first inorganic compound is performed for the semiconductor substrate(S20). A second cleaning process with a second inorganic compound is performed for the semiconductor substrate cleaned by the first cleaning process(S30). The first inorganic compound is a cleaning solution including fluorine. A volume composition ratio of the fluorine-included cleaning solution and deionized water is 1:500 to 1:5000.