| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield for semiconductor by oxidizing an ARC surface through the oxygen ion implantation and obtaining an uniform surface oxide film over an entire wafer. CONSTITUTION: The lower thin film(203) is formed on the upper part of the metal(201) formed on a semiconductor substrate(200). An ARC film is formed on the lower thin film in order to prevent reflection. An oxygen ion implantation is performed on the upper part of the ARC film and the ARC film is oxidized. A PR pattern is formed on the upper part of the oxidized ARC film. A metal wiring is formed by etching the PR pattern with a mask. An annealing process is performed with the range of temperature between 350°C and 450°C in order to forms an oxide film after the oxygen ion implantation.
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