| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element from which light is extracted with higher efficiency than before, to provide a light emitting device, to provide an illuminating apparatus, and to provide a display. <P>SOLUTION: On a surface of a substrate 1, a semiconductor layer 30 is formed which has an undoped GaN layer 2, an n-type semiconductor layer 3, an active layer 4, and a p-type semiconductor layer 5 laminated in this order. At a part of the semiconductor layer 30, an ohmic electrode 9 is formed on a surface of the n-type semiconductor layer 3 exposed by removing the p-type semiconductor layer 5 and active layer 4 by etching etc. A bonding electrode (n pad) 7 is formed on the substrate 1, extended covering the ohmic electrode 9, and connected to the ohmic electrode 9. A coating film 11 covering an outer circumferential side surface of the semiconductor layer 30 is formed on a side surface of the other part of the semiconductor layer 30, and a bonding electrode (p pad) 8 is formed on the substrate 1 nearby the semiconductor layer 30 where the coating film 11 is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT |
