| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having improved light sensitivity. <P>SOLUTION: A semiconductor device 1 comprises: a semiconductor thin film, having a light-incident surface 30b from which light enters and a photodiode portion 30a; an intermediate layer 62 having a convex surface 62a, provided above the surface of the semiconductor thin film on the side opposite to the light-incident surface 30b; and a convex reflecting layer 70, provided on the surface of the convex surface 62a and having a convex surface 70a which reflects light toward the photodiode portion 30a. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
