METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PLASMA ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device improving a selection ratio between a compound semiconductor and a mask. SOLUTION: This method of manufacturing a semiconductor device includes processes of: forming an etching mask on a processing object 10 formed of a compound semiconductor containing indium as an essential constituent element; introducing a mixture gas comprising two constituents such as hydrogen iodide gas and silicon tetrachloride gas onto the processing object 10 and converting the mixture gas to plasma; and entering the mixture gas converted to plasma into the processing object to selectively etch the processing object. The mixture ratio of the flow of the hydrogen iodide gas to the total flow of the mixture gas is 60-85%. COPYRIGHT: (C)2010,JPO&INPIT