发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the performance of a protection circuit to which a diode composed of a semiconductor film is applied. SOLUTION: The protection circuit is inserted between two input/output terminals. The protection circuit includes a diode composed of a semiconductor film formed on an insulating surface. Contact holes for connecting an N-type impurity region and a P-type impurity region of the diode to a first conductive film of the protection circuit are distributed over the entire impurity regions. Further, the contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersedly formed on the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and the terminal can be reduced and the entire semiconductor film of the diode can effectively function as a rectifier element. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010041042(A) 申请公布日期 2010.02.18
申请号 JP20090157737 申请日期 2009.07.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUKUOKA OSAMU;HAYAKAWA MASAHIKO;SHISHIDO HIDEAKI
分类号 H01L21/822;H01L27/04;H01L27/146;H01L29/786 主分类号 H01L21/822
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