METHOD OF MANUFACTURING NITROGEN DOPED SILICON WAFER AND NITROGEN DOPED SILICON WAFER OBTAINED BY THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitrogen doped silicon wafer and a nitrogen doped silicon wafer obtained by the same, both of which facilitate manufacturing the nitrogen doped silicon wafer injected with high concentration nitrogen necessary for forming high density BMD. Ž

SOLUTION: The method of manufacturing the nitrogen doped silicon wafer includes: a step in which any one of a surface and the backside or both thereof of a silicon wafer to which nitrogen is not doped are made to come in contact with HF solution, thereby silicon in a surface layer portion of a contact face is made to terminate by hydrogen; and a step in which the wafer after hydrogen termination step is held in a nitrogen contained atmosphere at a temperature of 1,100 to 1,300°C for 1 to 100 sec, and nitrogen is injected from a surface layer of a hydrogen termination step face to a depth of 20 μm and with a concentration of 5×1014to 1×1016atoms/cm3. Ž

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