发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which even when the front surface of a substrate is kept in a hydrophobic state, subjects a generated organic film to edge cut at a desired position on the substrate periphery and prevents unevenness in cleaning when the back surface of the substrate is cleaned. Ž<P>SOLUTION: The substrate processing apparatus comprises: a substrate processing unit 10 including a wafer holding mask 16 having a means for heat treatment in a chamber 11, the wafer holding mask 16 holding a wafer 100 to cover the whole back surface 102 of the wafer 100 and having a heating process unit; and a hydrophobing agent supply unit 20 which supplies a gaseous hydrophobing agent 22A to the substrate processing unit 10 to selectively turn the front surface 101 of the wafer 100 into a hydrophobic state. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010040747(A) 申请公布日期 2010.02.18
申请号 JP20080201708 申请日期 2008.08.05
申请人 TOSHIBA CORP 发明人 TSURU RIEKO;TAKEISHI TOMOYUKI;SATO YASUHIKO;MIYAMOTO SACHINOBU
分类号 H01L21/027 主分类号 H01L21/027
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